M16C30P Datasheet, PDF (39/57 Pages) Renesas Technology Corp – SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER

M16C/30P Group
5. Electrical Characteristics
Memory Expansion Mode, Microprocessor Mode
(For setting with no wait)
Read timing
BCLK
CSi
td(BCLK-CS)
25ns.max
tcyc
th(BCLK-CS)
−3ns.min
VCC1=VCC2=5V
ADi
BHE
ALE
RD
DBi
td(BCLK-AD)
25ns.max
td(BCLK-ALE)
25ns.max
th(BCLK-ALE)
-4ns.min
td(BCLK-RD)
25ns.max
tac1(RD-DB)
(0.5 × tcyc-45)ns.max
Hi-Z
tsu(DB-RD)
40ns.min
Write timing
th(BCLK-AD)
−3ns.min
th(RD-AD)
0ns.min
th(BCLK-RD)
0ns.min
th(RD-DB)
0ns.min
BCLK
CSi
td(BCLK-CS)
25ns.max
tcyc
th(BCLK-CS)
−3ns.min
ADi
BHE
ALE
WR, WRL,
WRH
DBi
td(BCLK-AD)
25ns.max
th(BCLK-AD)
−3ns.min
td(BCLK-ALE)
25ns.max
th(BCLK-ALE)
-4ns.min
th(WR-AD)
(0.5 × tcyc-10)ns.min
td(BCLK-WR)
25ns.max
th(BCLK-WR)
0ns.min
td(BCLK-DB)
40ns.max
Hi-Z
th(BCLK-DB)
4ns.min
tcyc=
1
f(BCLK)
td(DB-WR)
th(WR-DB)
(0.5 × tcyc-40)ns.min (0.5 × tcyc-10)ns.min
Measuring conditions
· VCC1=VCC2=5V
· Input timing voltage : VIL=0.8V, VIH=2.0V
· Output timing voltage : VOL=0.4V, VOH=2.4V
Figure 5.6 Timing Diagram (4)
Rev.1.22 Mar 30, 2007 Page 39 of 53
REJ03B0088-0122