M16C30P Datasheet, PDF (30/57 Pages) Renesas Technology Corp – SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER

M16C/30P Group
5. Electrical Characteristics
Table 5.10 Electrical Characteristics (2) ⁽¹⁾
Symbol
Parameter
Measuring Condition
ICC
Power Supply Current
In single-chip
Mask ROM
f(XIN)=16MHz
(VCC1=VCC2=4.0V to 5.5V) mode, the output
No division
pins are open and ^{One Time}
other pins are VSS ^Flash
f(XIN)=16MHz,
No division
Flash
Memory
f(XIN)=16MHz,
No division
One Time
Flash
f(XIN)=10MHz,
VCC1=5.0V
Flash Memory f(XIN)=10MHz,
Program
VCC1=5.0V
Flash Memory f(XIN)=10MHz,
Erase
VCC1=5.0V
Mask ROM
f(XCIN)=32kHz
Low power dissipation
mode, ROM ⁽³⁾
One Time
Flash
f(XCIN)=32kHz
Low power dissipation
mode, RAM ⁽³⁾
f(XCIN)=32kHz
Low power dissipation
mode, Flash Memory ⁽³⁾
Flash Memory f(XCIN)=32kHz
Low power dissipation
mode, RAM ⁽³⁾
f(XCIN)=32kHz
Low power dissipation
mode, Flash Memory ⁽³⁾
Mask ROM
One Time Flash
Flash Memory
f(XCIN)=32kHz
Wait mode ⁽²⁾,
Oscillation capability High
f(XCIN)=32kHz
Wait mode ⁽²⁾,
Oscillation capability Low
Stop mode
Topr =25°C
Standard
Unit
Min. Typ. Max.
10 15 mA
10 18 mA
12 18 mA
15
mA
15
mA
25
mA
25
μA
25
μA
350
μA
25
μA
420
μA
7.5
μA
2.0
μA
0.8 3.0 μA
NOTES:
1. Referenced to VCC1=VCC2=4.2 to 5.5V, VSS = 0V at Topr = −20 to 85°C / −40 to 85°C, f(XIN)=16MHz unless otherwise
specified.
2. With one timer operated using fC32.
3. This indicates the memory in which the program to be executed exists.
Rev.1.22 Mar 30, 2007 Page 30 of 53
REJ03B0088-0122