HD404374 Datasheet, PDF (111/161 Pages) Renesas Technology Corp – Low-Voltage AS Microcomputers with On-Chip A/D Converter

HD404374/HD404384/HD404389/HD404082/HD404084 Series
Notes:
1. When programming with a PROM writer, set up each ROM size to the address given in table 29. If it is
programmed erroneously to an address given in table 29 or later, check of writing of PROM may
become impossible. Particularly, caution should be exercised in the case of a plastic package since
reprogramming is impossible with it. Set the data in unused addresses to $FF.
2. If the indexes of the PROM writer socket, socket adapter and product are not aligned precisely, the
product may break down due to overcurrent. Be sure to check that they are properly set to the writer
before starting the writing process.
3. Two levels of program voltages (VPP) are available for the PROM: 12.5V and 21V. Our product
employs a VPP of 12.5V. If a voltage of 21V is applied, permanent breakdown of the product will
result. The VPP of 12.5V is obtained for the PROM writer by setting it according to the Intel 27258
specifications.
Table 27
Package
FP-30D
DP-28S
Socket Adapters
Model Name
Please ask Renesas Technology
service section.
Please ask Renesas Technology
service section.
Manufacturer
Writing/Verification
Programming of the built-in program ROM employs a high speed programming method. With this method,
high speed writing is effected without voltage stress to the device or without damaging the reliability of the
written data.
A basic programming flow chart is shown in figure 71 and a timing chart in figure 72.
For precautions for PROM writing procedure, refer to “Precautions for use of ZTAT^TM microcomputer with
build-in programmable ROM”.
Table 28 Selection of Mode
Mode
CE
OE
V
PP
Writing
“Low”
“High”
V_PP
Verification
“High”
“Low”
V_PP
Prohibition of programming “High”
“High”
V_PP
O to O
0
4
Data input
Data output
High impedance
Rev.5.00, Sep.11.2003, page 111 of 161