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TDA8029 Datasheet, PDF (51/58 Pages) NXP Semiconductors – Low power single card reader
Philips Semiconductors
Low power single card reader
Product specification
TDA8029
SYMBOL
PARAMETER
CONDITIONS
ti(r), ti(f)
to(r), to(f)
Rpu
tedge
Iedge
input rise and fall times
output rise and fall times
internal pull-up resistance
between I/O and VCC
width of active pull-up
pulse
current from I/O when
active pull-up
CL ≤ 60 pF
CL ≤ 60 pF
I/O configured as output,
rising from LOW to HIGH
VOH = 0.9 VCC; C = 60 pF
Timings
tact
activation sequence
duration
tde
deactivation sequence
duration
Protections and limitations
ICC(sd)
shut-down and limitation
current at VCC
II/O(lim)
limitation current on I/O
ICLK(lim)
limitation current on CLK
IRST(sd)
shut-down current on RST
IRST(lim)
limitation current on RST
Tsd
shut-down temperature
Card presence input: pin PRES
VIL
VIH
ILI(L)
ILI(H)
LOW level input voltage
HIGH level input voltage
input leakage current LOW VI = 0
input leakage current
HIGH
VI = VDD
Shut-down input: pin SDWN_N
VIL
VIH
ILI(L)
ILI(H)
LOW level input voltage
HIGH level input voltage
input leakage current LOW VI = 0
input leakage current
HIGH
VI = VDD
General purpose I/O: pins P16, P17, P26, P27, INT1_N, RX and TX
VIL
LOW level input voltage
VIH
HIGH level input voltage
VOL
output voltage LOW
IOL = 1.6 mA
VOH
output voltage HIGH
IOH = −30 µA
IIL
input current LOW
VI = 0.4 V
ITHL
HIGH to LOW transition VI = 2 V
current
MIN.
−
−
11
1/2fXTAL1
−1
TYP.
−
−
14
MAX.
1
0.1
17
−
1/3fXTAL1
−
−
−
−
130
−
−
100
−
−15
−70
−
−20
−
−
0.7VDD
−20
−20
−100 −
−
+15
−
+70
−20 −
−
+20
150 −
−
0.3VDD
−
−
−
+20
−
+20
−
0.7VDD
−20
−20
−
0.3VDD
−
−
−
+20
−
+20
−
−
0.2VDD + 0.9 −
−
−
VDD − 0.7
−
−1
−
−
−
0.2VDD
−
0.4
−
−50
−650
UNIT
µs
µs
kΩ
ns
mA
µs
µs
mA
mA
mA
mA
mA
°C
V
V
µA
µA
V
V
µA
µA
V
V
V
V
µA
µA
2003 Oct 30
51