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TDA8029 Datasheet, PDF (51/58 Pages) NXP Semiconductors – Low power single card reader | |||
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Philips Semiconductors
Low power single card reader
Product speciï¬cation
TDA8029
SYMBOL
PARAMETER
CONDITIONS
ti(r), ti(f)
to(r), to(f)
Rpu
tedge
Iedge
input rise and fall times
output rise and fall times
internal pull-up resistance
between I/O and VCC
width of active pull-up
pulse
current from I/O when
active pull-up
CL ⤠60 pF
CL ⤠60 pF
I/O conï¬gured as output,
rising from LOW to HIGH
VOH = 0.9 VCC; C = 60 pF
Timings
tact
activation sequence
duration
tde
deactivation sequence
duration
Protections and limitations
ICC(sd)
shut-down and limitation
current at VCC
II/O(lim)
limitation current on I/O
ICLK(lim)
limitation current on CLK
IRST(sd)
shut-down current on RST
IRST(lim)
limitation current on RST
Tsd
shut-down temperature
Card presence input: pin PRES
VIL
VIH
ILI(L)
ILI(H)
LOW level input voltage
HIGH level input voltage
input leakage current LOW VI = 0
input leakage current
HIGH
VI = VDD
Shut-down input: pin SDWN_N
VIL
VIH
ILI(L)
ILI(H)
LOW level input voltage
HIGH level input voltage
input leakage current LOW VI = 0
input leakage current
HIGH
VI = VDD
General purpose I/O: pins P16, P17, P26, P27, INT1_N, RX and TX
VIL
LOW level input voltage
VIH
HIGH level input voltage
VOL
output voltage LOW
IOL = 1.6 mA
VOH
output voltage HIGH
IOH = â30 µA
IIL
input current LOW
VI = 0.4 V
ITHL
HIGH to LOW transition VI = 2 V
current
MIN.
â
â
11
1/2fXTAL1
â1
TYP.
â
â
14
MAX.
1
0.1
17
â
1/3fXTAL1
â
â
â
â
130
â
â
100
â
â15
â70
â
â20
â
â
0.7VDD
â20
â20
â100 â
â
+15
â
+70
â20 â
â
+20
150 â
â
0.3VDD
â
â
â
+20
â
+20
â
0.7VDD
â20
â20
â
0.3VDD
â
â
â
+20
â
+20
â
â
0.2VDD + 0.9 â
â
â
VDD â 0.7
â
â1
â
â
â
0.2VDD
â
0.4
â
â50
â650
UNIT
µs
µs
kâ¦
ns
mA
µs
µs
mA
mA
mA
mA
mA
°C
V
V
µA
µA
V
V
µA
µA
V
V
V
V
µA
µA
2003 Oct 30
51
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