PI2EQX5804CNJE Datasheet, PDF (10/23 Pages) Pericom Semiconductor Corporation – 5.0Gbps 4-Lane PCIe® 2.0 ReDriver™ with Equalization & Emphasis

PI2EQX5804C
5.0Gbps 4-Lane PCIe® 2.0 ReDriver™ with
Equalization & Emphasis
THE MOS-FET’S.
The requirements for the most important characteristics of the MOS-FET’s, used as bi-directional level shifter.
Type : N-channel enhancement mode MOS-FET.
Gate threshold voltage : VGS(th) min. 0.8V max. 1.5V
On resistance : RDS(on) max. 30 Ohm @ ID= 3mA, VGS= 2.5V
Input capacitance : Ciss max. 50 pF @ VDS= 1V, VGS = 0V
Switching times : ton toff max. 50 ns.
Allowed drain current : ID 30 mA or higher.
VDD1= 1.2V
27k 10k
VDD2= 3.3 V
Vbias = 2.4V
100nf
4.7k 4.7k _g
T1
2SK3018
s
d
g _T2
s
d
10k 10k
VDD2= 3.3 V
SDA2
SCL2
2SK3018
to I2C controller
PI2EQX5804C PI2EQX5804C
“Lower voltage” section
“Higher voltage” section
Figure 2. Bi-directional Level Shifter Circuit
MOS-FET’s in table 1 are suitable to be used as level shifter. The 2SK3018 are low cost devices and have
good properties for 1.2V/3.3V level shifting, isolation and protection.
Manufacturer Manufac-
Part Number turer
2SK3018T106 Rohm
Drain to Current - Con- Input Capac- Gate
Source Volt- tinuous Drain itance (Ciss) threshold
age (Vds) (Id) @ 25° C @ Vds
voltage
30V
100mA
13pF @ 5V
0.8~1.5V
@100μA
Package /
Case
SOT-23
09-0001
10
PS8926B
06/08/09