COP888GW Datasheet, PDF (3/44 Pages) National Semiconductor (TI) – 8-Bit Microcontroller with Pulse Train Generators

Absolute Maximum Ratings (Note)
SuppIy Voltage (V_CC)
Voltage at Any Pin
Total Current into V_CC Pin (Source)
Total Current out of GND Pin (Sink)
7V
b0 3V to V_CC a0 3V
100 mA
110 mA
Storage Temperature Range
b65 C to a150 C
Note Absolute maximum ratings indicate limits beyond
which damage to the device may occur DC and AC electri-
cal specifications are not ensured when operating the de-
vice at absolute maximum ratings
DC Electrical Characteristics COP888GW b40 C ^s T_A ^s a85 C unless otherwise specified
Parameter
ConditIons
Min
Typ
Max
Operating Voltage
Power Supply Ripple (Note 1)
Supply Current (Note 2)
CKI e 10 MHz
CKI e 4 MHz
HALT Current (Note 3)
IDLE Current
CKI e 10 MHz
CKI e 4 MHz
Input Levels (V_IH V_IL)
RESET CKI
Logic High
Logic Low
All Other Inputs
Logic High
Logic Low
Hi-Z Input Leakage
Input Pullup Current
G Port Input Hysteresis
Output Current Levels
D Outputs
Source
Sink
All Others
Source (Weak Pull-Up Mode)
Source (Push-Pull Mode)
Sink (Push-Pull Mode)
TRI-STATE Leakage
Allowable Sink Source
Current per Pin
D Outputs (Sink)
All others
Peak-to-Peak
V_CC e 6V t_c e 1 ms
V_CC e 2 5V t_c e 2 5 ms
V_CC e 6V CKI e 0 MHz
V_CC e 6V
V_CC e 2 5V
V_CC e 6V
V_CC e 6V V_IN e 0V
(Note 6)
V_CC e 4V V_OH e 3 3V
V_CC e 2 5V V_OH e 1 8V
V_CC e 4V V_OL e 1V
V_CC e 2 5V V_OL e 0 4V
V_CC e 4V V_OH e 2 7V
V_CC e 2 5V V_OH e 1 8V
V_CC e 4V V_OH e 3 3V
V_CC e 2 5V V_OH e 1 8V
V_CC e 4V V_OL e 0 4V
V_CC e 2 5V V_OL e 0 4V
V_CC e 6 0V
25
60
0 1 V_CC
10
17
k₁
10
17
04
0 8 V_CC
0 7 V_CC
b2
b40
0 05 V_CC
0 2 V_CC
0 2 V_CC
a2
b250
0 35 V_CC
b0 4
b0 2
10
20
b10
b2 5
b0 4
b0 2
16
07
b2
b100
b33
a2
15
3
Maximum Input Current
without Latchup (Note 4 6)
Room Temp
g200
RAM Retention Voltage V_R (Note 5)
500 ns Rise and Fall Time (min)
2
Input Capacitance
(Note 6)
7
Load Capacitance on D2
(Note 6)
1000
UnIts
V
V
mA
mA
mA
mA
mA
V
V
V
V
mA
mA
V
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
pF
pF
3
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