N25Q064A13ESF40G Datasheet, PDF (71/81 Pages) Micron Technology – Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase

64Mb, 3V, Multiple I/O Serial Flash Memory
AC Characteristics and Operating Conditions
Table 38: AC Characteristics and Operating Conditions (Continued)
Parameter
PAGE PROGRAM cycle time (256 bytes)
Symbol
t_PP
Min
–
Typ¹
0.5
Max
5
Unit
ms
Notes
7
PAGE PROGRAM cycle time (n bytes)
–
int(n/8) ×
5
ms
7
0.015⁸
PAGE PROGRAM cycle time, V_PP = V_PPH (256
bytes)
–
0.4
5
ms
7
PROGRAM OTP cycle time (64 bytes)
Subsector ERASE cycle time
Sector ERASE cycle time
–
0.2
–
ms
7
t_SSE
–
0.25
0.8
s
t_SE
–
0.7
3
s
Sector ERASE cycle time (with V_PP = V_PPH)
Bulk ERASE cycle time
–
0.6
3
s
t_BE
–
60
120
s
Bulk ERASE cycle time (with V_PP = V_PPH)
–
50
120
s
Notes:
1. Typical values given for T_A = 25 °C.
2. ^tCH + ^tCL must add up to 1/^fC.
3. Value guaranteed by characterization; not 100% tested.
4. Expressed as a slew-rate.
5. Only applicable as a constraint for a WRITE STATUS REGISTER command when STATUS
REGISTER WRITE is set to 1.
6. V_PPH should be kept at a valid level until the PROGRAM or ERASE operation has comple-
ted and its result (success or failure) is known.
7. When using the PAGE PROGRAM command to program consecutive bytes, optimized
timings are obtained with one sequence including all the bytes versus several sequences
of only a few bytes (1 < n < 256).
8. int(A) corresponds to the upper integer part of A. For example int(12/8) = 2, int(32/8) = 4
int(15.3) =16.
PDF: 09005aef845665f4
n25q_64mb_3v_65nm.pdf - Rev. K 08/13 EN
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