N25Q064A13ESF40G Datasheet, PDF (53/81 Pages) Micron Technology – Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase

64Mb, 3V, Multiple I/O Serial Flash Memory
ERASE Operations
mand, and the WRITE ENHANCED VOLATILE CONFIGURATION REGISTER command.
When the ERASE operation resumes, it does not check the new lock status of the WRITE
LOCK REGISTER command.
During a PROGRAM SUSPEND operation, a READ operation is possible in any page ex-
cept the one in a suspended state. Reading from a page that is in a suspended state will
output indeterminate data. The commands allowed during a program suspend state in-
clude the WRITE VOLATILE CONFIGURATION REGISTER command and the WRITE
ENHANCED VOLATILE CONFIGURATION REGISTER command.
It is possible to nest a PROGRAM/ERASE SUSPEND operation inside a PROGRAM/
ERASE SUSPEND operation just once. Issue an ERASE command and suspend it. Then
issue a PROGRAM command and suspend it also. With the two operations suspended,
the next PROGRAM/ERASE RESUME command resumes the latter operation, and a sec-
ond PROGRAM/ERASE RESUME command resumes the former (or first) operation.
Table 25: Suspend Parameters
Parameter
Erase to suspend
Program to suspend
Subsector erase to sus-
pend
Suspend latency
Suspend latency
Suspend latency
Condition
Sector erase or erase resume to erase suspend
Program resume to program suspend
Subsector erase or subsector erase resume to erase sus-
pend
Program
Subsector erase
Erase
Typ Max Units Notes
700
–
µs
1
5
–
µs
1
50
–
µs
1
7
–
µs
2
15
–
µs
2
15
–
µs
3
Notes:
1. Timing is not internally controlled.
2. Any READ command accepted.
3. Any command except the following are accepted: SECTOR, SUBSECTOR, or BULK ERASE;
WRITE STATUS REGISTER; WRITE NONVOLATILE CONFIGURATION REGISTER; and PRO-
GRAM OTP.
PDF: 09005aef845665f4
n25q_64mb_3v_65nm.pdf - Rev. K 08/13 EN
53
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