N25Q064A13ESF40G Datasheet, PDF (37/81 Pages) Micron Technology – Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase

64Mb, 3V, Multiple I/O Serial Flash Memory
READ IDENTIFICATION Operations
Table 21: Serial Flash Discovery Parameter – Header Structure
Description
SFDP signature
SFDP revision
Number of parameter headers
Unused
Parameter ID (0)
Parameter minor revision
Parameter major revision
Parameter length (in DW)
Parameter table pointer
Unused
Minor
Major
Byte
Address
00h
01h
02h
03h
04h
05h
06h
07h
08h
09h
0Ah
0Bh
0Ch
0Dh
0Eh
0Fh
Note: 1. Locations 10h to 2Fh contain FFh.
Table 22: Parameter ID
Description
Minimum block/sector erase sizes
Write granularity
WRITE ENABLE command required for writing to volatile status
registers
WRITE ENABLE command code select for writing to volatile status
register
Unused
4KB ERASE command code
Supports 1-1-2 fast read
Address bytes
Supports double transfer rate clocking
Supports 1-2-2 fast read
Supports 1-4-4 fast read
Supports 1-1-4 fast read
Unused
Reserved
Byte
Address
30h
31h
32h
33h
Bits
7:0
7:0
7:0
7:0
7:0
7:0
7:0
7:0
7:0
7:0
7:0
7:0
7:0
7:0
7:0
7:0
Bits
1:0
2
3
4
7:5
7:0
0
2:1
3
4
5
6
7
7:0
Data
53h
46h
44h
50h
00h
01h
00h
FFh
00h
00h
01h
09h
30h
00h
00h
FFh
Data
01b
1
0
0
111b
20h
1
00b
0
1
1
1
1
FFh
PDF: 09005aef845665f4
n25q_64mb_3v_65nm.pdf - Rev. K 08/13 EN
37
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