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N25Q064A13ESF40G Datasheet, PDF (16/81 Pages) Micron Technology – Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase
64Mb, 3V, Multiple I/O Serial Flash Memory
Serial Peripheral Interface Modes
Serial Peripheral Interface Modes
The device can be driven by a microcontroller while its serial peripheral interface is in
either of the two modes shown here. The difference between the two modes is the clock
polarity when the bus master is in standby mode and not transferring data. Input data is
latched in on the rising edge of the clock, and output data is available from the falling
edge of the clock.
Table 7: SPI Modes
Note 1 applies to the entire table
SPI Modes
CPOL = 0, CPHA = 0
CPOL = 1, CPHA = 1
Clock Polarity
C remains at 0 for (CPOL = 0, CPHA = 0)
C remains at 1 for (CPOL = 1, CPHA = 1)
Note: 1. The listed SPI modes are supported in extended, dual, and quad SPI protocols.
Shown below is an example of three memory devices in extended SPI protocol in a sim-
ple connection to an MCU on an SPI bus. Because only one device is selected at a time,
that one device drives DQ1, while the other devices are High-Z.
Resistors ensure the device is not selected if the bus master leaves S# High-Z. The bus
master might enter a state in which all input/output is High-Z simultaneously, such as
when the bus master is reset. Therefore, the serial clock must be connected to an exter-
nal pull-down resistor so that S# is pulled HIGH while the serial clock is pulled LOW.
This ensures that S# and the serial clock are not HIGH simultaneously and that tSHCH
is met. The typical resistor value of 100kΩ, assuming that the time constant R × Cp (Cp =
parasitic capacitance of the bus line), is shorter than the time the bus master leaves the
SPI bus in High-Z.
Example: Cp = 50pF, that is R × Cp = 5μs. The application must ensure that the bus mas-
ter never leaves the SPI bus High-Z for a time period shorter than 5μs. W# and HOLD#
should be driven either HIGH or LOW, as appropriate.
PDF: 09005aef845665f4
n25q_64mb_3v_65nm.pdf - Rev. K 08/13 EN
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