N25Q064A13ESF40G Datasheet, PDF (12/81 Pages) Micron Technology – Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase

64Mb, 3V, Multiple I/O Serial Flash Memory
Memory Organization
Memory Organization
Memory Configuration and Block Diagram
Each page of memory can be individually programmed. Bits are programmed from one
through zero. The device is subsector, sector, or bulk-erasable, but not page-erasable.
Bits are erased from zero through one. The memory is configured as 8,388,608 bytes (8
bits each); 128 sectors (64KB each); 2048 subsectors (4KB each); and 37,768 pages (256
bytes each); and 64 OTP bytes are located outside the main memory array.
Figure 6: Block Diagram
HOLD#
W#/V_PP
S#
C
DQ0
DQ1
Control logic
High voltage
generator
I/O shift register
64 OTP bytes
Address register
and counter
256 byte
data buffer
7FFFFFh
Status
register
PDF: 09005aef845665f4
n25q_64mb_3v_65nm.pdf - Rev. K 08/13 EN
000000h
000FFFh
256 bytes (page size)
X decoder
12
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