MT40A512M16JY-083E Datasheet, PDF (302/358 Pages) Micron Technology – Automotive DDR4 SDRAM

8Gb: x8, x16 Automotive DDR4 SDRAM
DRAM Package Electrical Specifications
Table 133: Pad Input/Output Capacitance
DDR4-1600,
1866, 2133
Parameter
Symbol Min Max
Input/output capacitance:
DQ, DM, DQS_t, DQS_c,
TDQS_t, TDQS_c
C_IO
0.55 1.4
Input capacitance: CK_t and
C_CK
0.2 0.8
CK_c
Input capacitance delta: CK_t
and CK_c
C_DCK
0 0.05
Input/output capacitance del- C_DDQS
ta: DQS_t and DQS_c
0 0.05
Input capacitance: CTRL,
ADD, CMD input-only pins
C_I
0.2 0.8
Input capacitance delta: All
CTRL input-only pins
C_{DI_CTRL} –0.1 0.1
Input capacitance delta: All C_{DI_ADD_CM} –0.1 0.1
ADD/CMD input-only pins
D
Input/output capacitance del- C_DIO
ta: DQ, DM, DQS_t, DQS_c,
–0.1 0.1
TDQS_t, TDQS_c
Input/output capacitance:
ALERT pin
C_ALERT
0.5 1.5
Input/output capacitance: ZQ C_ZQ
pin
–
2.3
Input/output capacitance:
TEN pin
C_TEN
0.2 2.3
DDR4-2400,
2666
Min Max
0.55 1.15
0.2 0.7
0 0.05
0 0.05
0.2 0.7
–0.1 0.1
–0.1 0.1
–0.1 0.1
0.5 1.5
–
2.3
0.2 2.3
DDR4-2933
Min Max
0.55 1.00
0.2 0.7
0 0.05
0 0.05
0.2 0.6
–0.1 0.1
–0.1 0.1
–0.1 0.1
0.5 1.5
–
2.3
0.2 2.3
DDR4-3200
Min Max
0.55 1.00
Unit
pF
Notes
1, 2, 3
0.2 0.7 pF 1, 2, 3,
4
0 0.05 pF 1, 2, 3,
5
0 0.05 pF 1, 2, 3
0.2 0.55 pF 1, 2, 3,
6
–0.1 0.1 pF 1, 2, 3,
7
–0.1 0.1 pF 1, 2, 3,
8, 9
–0.1 0.1 pF 1, 2, 10,
11
0.5 1.5 pF 1, 2, 2,
3
–
2.3 pF 1, 2, 3,
12
0.2 2.3 pF 1, 2, 3,
13
Notes: 1. Although the DM, TDQS_t, and TDQS_c pins have different functions, the loading
matches DQ and DQS.
2. This parameter is not subject to a production test; it is verified by design and characteri-
zation. The capacitance is measured according to the JEP147 specification, “Procedure
for Measuring Input Capacitance Using a Vector Network Analyzer (VNA),” with V_DD,
V_DDQ, V_SS, and V_SSQ applied and all other pins floating (except the pin under test, CKE,
RESET_n and ODT, as necessary). V_DD = V_DDQ = 1.5V, V_BIAS = V_DD/2 and on-die termination
off. Measured data is rounded using industry standard half-rounded up methodology to
the nearest hundredth of the MSB.
3. This parameter applies to monolithic die, obtained by de-embedding the package L and
C parasitics.
4. C_DIO = C_IO(DQ, DM) - 0.5 × (C_IO(DQS_t) + C_IO(DQS_c)).
5. Absolute value of C_IO (DQS_t), C_IO (DQS_c)
6. Absolute value of CCK_t, CCK_c
7. C_I applies to ODT, CS_n, CKE, A[15:0], BA[1:0], RAS_n, CAS_n, and WE_n.
8. C_{DI_CTRL} applies to ODT, CS_n, and CKE.
9. C_{DI_CTRL} = C_I(CTRL) - 0.5 × (C_I(CLK_t) + C_I(CLK_c)).
10. C_{DI_ADD_CMD} applies to A[15:0], BA1:0], RAS_n, CAS_n and WE_n.
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. C 3/17 EN
302
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