PIC16LF1904 Datasheet, PDF (89/288 Pages) Microchip Technology – 28/40/44-Pin Flash-Based, 8-Bit CMOS Microcontrollers with LCD Driver and nanoWatt XLP Technology

10.2.3
ERASING FLASH PROGRAM
MEMORY
While executing code, program memory can only be
erased by rows. To erase a row:
1. Load the PMADRH:PMADRL register pair with
any address within the row to be erased.
2. Clear the CFGS bit of the PMCON1 register.
3. Set the FREE and WREN bits of the PMCON1
register.
4. Write 55h, then AAh, to PMCON2 (Flash
programming unlock sequence).
5. Set control bit WR of the PMCON1 register to
begin the erase operation.
See Example 10-2.
After the “BSF PMCON1,WR” instruction, the processor
requires two cycles to set up the erase operation. The
user must place two NOP instructions after the WR bit is
set. The processor will halt internal operations for the
typical 2 ms erase time. This is not Sleep mode as the
clocks and peripherals will continue to run. After the
erase cycle, the processor will resume operation with
the third instruction after the PMCON1 write instruction.
PIC16LF1904/6/7
FIGURE 10-4:
FLASH PROGRAM
MEMORY ERASE
FLOWCHART
Start
Erase Operation
Disable Interrupts
(GIE = 0)
Select
Program or Configuration Memory
(CFGS)
Select Row Address
(PMADRH:PMADRL)
Select Erase Operation
(FREE = 1)
Enable Write/Erase Operation
(WREN = 1)
Unlock Sequence
(FFIGigUurReE1x0-x3)
CPU stalls while
Erase operation completes
(2 ms typical)
Disable Write/Erase Operation
(WREN = 0)
Re-enable Interrupts
(GIE = 1)
End
Erase Operation
 2011 Microchip Technology Inc.
Preliminary
DS41569A-page 89