PIC18F6390_07 Datasheet, PDF (366/414 Pages) Microchip Technology – 64/80-Pin Flash Microcontrollers with LCD Driver and nanoWatt Technology

PIC18F6390/6490/8390/8490
TABLE 26-1: MEMORY PROGRAMMING REQUIREMENTS
DC Characteristics
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for industrial
Param
No.
Sym
Characteristic
Min Typ† Max Units
Conditions
Program Flash Memory
D110 VPP Voltage on MCLR/VPP pin
10.0
—
12.0 V
D113 IDDP Supply Current during
Programming
—
—
1
mA
D130 EP Cell Endurance
—
1K
— E/W -40°C to +85°C
D131 VPR VDD for Read
VMIN
—
5.5
V VMIN = Minimum operating
voltage
D132 VIE VDD for Block Erase
2.75
—
5.5
V Using ICSP™ port
D132A VIW VDD for Externally Timed Erase 2.75
—
or Write
5.5
V Using ICSP port
D132B VPEW VDD for Self-Timed Write
VMIN
—
5.5
V VMIN = Minimum operating
voltage
D133 TIE ICSP Block Erase Cycle Time
—
4
—
ms VDD > 4.5V
D133A TIW ICSP Erase or Write Cycle Time 2
(externally timed)
—
—
ms VDD > 4.5V
D133A TIW Self-Timed Write Cycle Time
—
2
—
ms
D134 TRETD Characteristic Retention
40
100
— Year Provided no other
specifications are violated
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
DS39629C-page 364
© 2007 Microchip Technology Inc.