PIC16F627A Datasheet, PDF (139/168 Pages) Microchip Technology – FLASH-Based 8-Bit CMOS Microcontrollers

PIC16F627A/628A/648A
TABLE 17-1: DC Characteristics: PIC16F627A/628A/648A (Industrial, Extended)
PIC16LF627A/628A/648A (Industrial)
DC Characteristics
Standard Operating Conditions (unless otherwise stated)
Operating temperature
-40°C ≤ TA ≤ +85°C for industrial and
-40°C ≤ TA ≤ +125°C for extended
Operating voltage VDD range as described in DC spec Table 17-2 and Table 17-3
Parameter
No.
Sym
Characteristic
Min Typ† Max Units
Conditions
D120
D120A
D121
ED
ED
VDRW
Data EEPROM Memory
Endurance
Endurance
VDD for read/write
100K
10K
VMIN
1M
100K
—
D122
D123
TDEW Erase/Write cycle time
TRETD Characteristic Retention
—
4
100
—
D124
D130
D130A
D131
TREF
EP
EP
VPR
Number of Total Erase/Write
Cycles before Refresh⁽¹⁾
Program FLASH Memory
Endurance
Endurance
VDD for read
1M
10K
1000
VMIN
10M
100K
10K
—
D132
D132A
VIE VDD for Block erase
VPEW VDD for write
4.5
—
VMIN
—
D133
D133A
D134
TIE Block Erase cycle time
TPEW Write cycle time
TRETP Characteristic Retention
—
4
—
2
100
—
* These parameters are characterized but not tested.
— E/W -40°C ≤ TA ≤ 85°C
E/W 85°C ≤ TA ≤ 125°C
5.5
V VMIN = Minimum operating
voltage
8*
ms
— Year Provided no other
specifications are violated
— E/W -40°C to +85°C
— E/W -40°C ≤ TA ≤ 85°C
— E/W 85°C ≤ TA ≤ 125°C
5.5
V VMIN = Minimum operating
voltage
5.5
V
5.5
V VMIN = Minimum operating
voltage
8*
ms VDD > 4.5V
4*
ms
— year Provided no other
specifications are violated
† Data in “Typ” column is at 5.0 V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: Refer to Section 13.7 for a more detailed discussion on data EEPROM endurance.
 2002 Microchip Technology Inc.
Preliminary
DS40044A-page 137