1032E Datasheet, PDF (4/16 Pages) Lattice Semiconductor – In-System Programmable High Density PLD

Specifications ispLSI 1032E
Switching Test Conditions
Input Pulse Levels
GND to 3.0V
Figure 2. Test Load
Input Rise and Fall Time
10% to 90%
Input Timing Reference Levels
Output Timing Reference Levels
Output Load
3-state levels are measured 0.5V from
steady-state active level.
-125
≤ 2 ns
Others
≤ 3 ns
1.5V
1.5V
See Figure 2
Table 2-0003/1032E
Output Load Conditions (see Figure 2)
TEST CONDITION
A
Active High
B
Active Low
Active High to Z
C ^{at VOH -0.5V}
Active Low to Z
at V_OL+0.5V
R1
470Ω
∞
470Ω
∞
R2
390Ω
390Ω
390Ω
390Ω
CL
35pF
35pF
35pF
5pF
470Ω
390Ω 5pF
Table 2-0004/1032E
DC Electrical Characteristics
+ 5V
S _Device
IGN ^Output
R1
Test
Point
R2
CL*
DES _{*CL includes Test Fixture and Probe Capacitance.}
NEW
0213a
FOR
Over Recommended Operating Conditions
A _SYMBOL
PARAMETER
E _VOL
Output Low Voltage
2 _VOH
Output High Voltage
3 _IIL
Input or I/O Low Leakage Current
0 _IIH
1 _IIL-isp
Input or I/O High Leakage Current
ispEN Input Low Leakage Current
I _IIL-PU
S _IOS1
I/O Active Pull-Up Current
Output Short Circuit Current
ispL ^{ICC2, 4 Operating Power Supply Current}
CONDITION
I_OL= 8 mA
I_OH = -4 mA
0V ≤ V_IN ≤ V_IL (Max.)
3.5V ≤ V_IN ≤ V_CC
0V ≤ V_IN ≤ V_IL
0V ≤ V_IN ≤ V_IL
V_CC= 5V, V_OUT = 0.5V
V_IL= 0.5V, V_IH = 3.0V
f_CLOCK = 1 MHz
Commercial
Industrial
MIN.
–
2.4
–
–
–
–
–
–
–
TYP.³
–
–
–
–
–
–
–
190
190
MAX. UNITS
0.4
V
–
V
-10 µA
10
µA
-150 µA
-150 µA
-200 mA
–
mA
–
mA
Table 2-0007/1032E
1. One output at a time for a maximum duration of one second. V_OUT = 0.5V was selected to avoid test problems
by tester ground degradation. Characterized but not 100% tested.
E 2. Measured using eight 16-bit counters.
3. Typical values are at V_CC= 5V and T_A= 25°C.
S _{4. Maximum ICC varies widely with specific device configuration and operating frequency. Refer to the Power Consumption}
U^{section of this data sheet and Thermal Management section of the Lattice Semiconductor Data Book or CD-ROM to}
estimate maximum I_CC.
4