1032E Datasheet, PDF (3/16 Pages) Lattice Semiconductor – In-System Programmable High Density PLD

Specifications ispLSI 1032E
Absolute Maximum Ratings ¹
Supply Voltage V_cc .................................. -0.5 to +7.0V
Input Voltage Applied ........................ -2.5 to V_CC +1.0V
Off-State Output Voltage Applied ..... -2.5 to V_CC +1.0V
Storage Temperature ................................ -65 to 150°C
NS ^{Case Temp. with Power Applied .............. -55 to 125°C}
IG ^{Max. Junction Temp. (TJ) with Power Applied ... 150°C}
1. Stresses above those listed under the “Absolute Maximum Ratings” may cause permanent damage to the device. Functional
S _{operation of the device at these or at any other conditions above those indicated in the operational sections of this specification}
DE ^{is not implied (while programming, follow the programming specifications).}
DC Recommended Operating Conditions
W _SYMBOL
NE _VCC
R VIL
FO ^VIH
Supply Voltage
Input Low Voltage
Input High Voltage
PARAMETER
Commercial _{TA = 0°C to + 70°C}
Industrial
T_A = -40°C to + 85°C
MIN.
4.75
4.5
0
2.0
MAX. UNITS
5.25
V
5.5
V
0.8
V
V_cc+1
V
Table 2-0005/1032E
Capacitance (T_A=25^oC, f=1.0 MHz)
A _SYMBOL
PARAMETER
2E ^C1
Dedicated Input, I/O, Y1, Y2, Y3, Clock Capacitance
(Commercial/Industrial)
03 ^C2
Y0 Clock Capacitance
I ¹ Data Retention Specifications
S _PARAMETER
L _{Data Retention}
isp ^{Erase/Reprogram Cycles}
MINIMUM
20
10000
TYPICAL
8
UNITS
pf
15
pf
MAXIMUM
–
–
TEST CONDITIONS
V_CC = 5.0V, V_PIN = 2.0V
V_CC = 5.0V, V_PIN = 2.0V
Table 2-0006/1032E
UNITS
Years
Cycles
Table 2-0008/1032E
USE
3