300 Datasheet, PDF (25/95 Pages) DB Lectro Inc – SCREW TYPE SERIES

Electrical Specifications
2.6.2
GTL+ Asynchronous Signals
Legacy input signals such as A20M#, IGNNE#, INIT#, SMI#, and STPCLK# use CMOS
input buffers. All of these signals follow the same DC requirements as GTL+ signals;
however, the outputs are not actively driven high (during a logical 0 to 1 transition) by
the processor. These signals do not have setup or hold time specifications in relation to
BCLK[1:0].
All of the GTL+ Asynchronous signals are required to be asserted/de-asserted for at
least six BCLKs in order for the processor to recognize the proper signal state. See
Section 2.6.3 for the DC specifications for the GTL+ Asynchronous signal groups. See
Section 6.2 for additional timing requirements for entering and leaving the low power
states.
2.6.3
Processor DC Specifications
The processor DC specifications in this section are defined at the processor core (pads)
unless otherwise stated. All specifications apply to all frequencies and cache sizes
unless otherwise stated.
Table 10. GTL+ Signal Group DC Specifications
Symbol
Parameter
Min
Max
Unit Notes¹
V_IL
V_IH
V_OH
I_OL
I_LI
Input Low Voltage
Input High Voltage
Output High Voltage
Output Low Current
Input Leakage
Current
0.0
GTLREF – (0.10 * V_TT)
V
GTLREF + (0.10 * V_TT)
V_TT
V
0.90*V_TT
V_TT
V
N/A
V_{TT_MAX}/
[(0.50*R_{TT_MIN})+(R_{ON_MIN})]
A
N/A
± 200
µA
2, 3
4, 5, 3
3, 5
-
6
I_LO
Output Leakage
Current
N/A
± 200
µA
7
R_ON Buffer On Resistance
6
12
Ω
NOTES:
1. Unless otherwise noted, all specifications in this table apply to all processor frequencies.
2. V_IL is defined as the voltage range at a receiving agent that will be interpreted as a logical low value.
3. The V_TT referred to in these specifications is the instantaneous V_TT.
4. V_IH is defined as the voltage range at a receiving agent that will be interpreted as a logical high value.
5. V_IH and V_OH may experience excursions above V_TT. However, input signal drivers must comply with the
signal quality specifications.
6. Leakage to V_SS with land held at V_TT.
7. Leakage to V_TT with land held at 300 mV.
Datasheet
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