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80C186EA Datasheet, PDF (24/50 Pages) Intel Corporation – 16-BIT HIGH-INTEGRATION EMBEDDED PROCESSORS
80C186EA 80C188EA 80L186EA 80L188EA
ICC VERSUS FREQUENCY AND VOLTAGE
The current (ICC) consumption of the processor is
essentially composed of two components IPD and
ICCS
IPD is the quiescent current that represents internal
device leakage and is measured with all inputs or
floating outputs at GND or VCC (no clock applied to
the device) IPD is equal to the Powerdown current
and is typically less than 50 mA
ICCS is the switching current used to charge and
discharge parasitic device capacitance when chang-
ing logic levels Since ICCS is typically much greater
than IPD IPD can often be ignored when calculating
ICC
ICCS is related to the voltage and frequency at which
the device is operating It is given by the formula
Where
Power e V c I e V2 c CDEV c f
I e ICC e ICCS e V c CDEV c f
V e Device operating voltage (VCC)
CDEV e Device capacitance
f e Device operating frequency
ICCS e ICC e Device current
Measuring CDEV on a device like the 80C186EA
would be difficult Instead CDEV is calculated using
the above formula by measuring ICC at a known VCC
and frequency (see Table 11) Using this CDEV val-
ue ICC can be calculated at any voltage and fre-
quency within the specified operating range
EXAMPLE Calculate the typical ICC when operating
at 20 MHz 4 8V
ICC e ICCS e 4 8 c 0 515 c 20 49 mA
PDTMR PIN DELAY CALCULATION
The PDTMR pin provides a delay between the as-
sertion of NMI and the enabling of the internal
clocks when exiting Powerdown A delay is required
only when using the on-chip oscillator to allow the
crystal or resonator circuit time to stabilize
NOTE
The PDTMR pin function does not apply when
RESIN is asserted (i e a device reset during Pow-
erdown is similar to a cold reset and RESIN must
remain active until after the oscillator has stabi-
lized)
To calculate the value of capacitor required to pro-
vide a desired delay use the equation
440 c t e CPD (5V 25 C)
Where t e desired delay in seconds
CPD e capacitive load on PDTMR in mi-
crofarads
EXAMPLE To get a delay of 300 ms a capacitor
value of CPD e 440 c (300 c 10b6) e 0 132 mF is
required Round up to standard (available) capaci-
tive values
NOTE
The above equation applies to delay times greater
than 10 ms and will compute the TYPICAL capaci-
tance needed to achieve the desired delay A delay
variance of a50% or b25% can occur due to
temperature voltage and device process ex-
tremes In general higher VCC and or lower tem-
perature will decrease delay time while lower VCC
and or higher temperature will increase delay time
Parameter
Table 11 CDEV Values
Typ
Max
Units
Notes
CDEV (Device in Reset)
0 515
0 905
mA V MHz
12
CDEV (Device in Idle)
0 391 0 635 mA V MHz
12
1 Max CDEV is calculated at b40 C all floating outputs driven to VCC or GND and all
outputs loaded to 50 pF (including CLKOUT and OSCOUT)
2 Typical CDEV is calculated at 25 C with all outputs loaded to 50 pF except CLKOUT and
OSCOUT which are not loaded
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