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BTC50010-1TAA_15 Datasheet, PDF (9/31 Pages) Infineon Technologies AG – High-Side Power Connector
BTC50010-1TAA
General Product Characteristics
Table 2 Absolute Maximum Ratings (cont’d)1)
TJ = -40 °C to +150 °C, all voltages and currents refer to definitions in Figure 3 (unless otherwise specified).
Parameter
Symbol
Values
Unit Note /
Number
Min. Typ. Max.
Test Condition
Storage Temperature
TSTG
-55 –
150
°C –
P_4.1.16
ESD Susceptibility
ESD Susceptibility (all pins)
VESD
-2
–
2
ESD Susceptibility OUT pin vs. VESD_out -4
–
4
VS
1) Not subject to production test, specified by design.
kV
HBM7)
kV
HBM7)
P_4.1.17
P_4.1.18
2) VS(LD) is setup without DUT connected to the generator per ISO 7637-1.
3) Relevant to application case such as loss of load, loss of battery (also negative ISO pulse).
4) IQ_b_125°C = a x b x IRATE. “a” is the temperature re-rating factor from the fuse curve for 125°C refer to 25°C. “b” is the factor
of load current to IRATE at 25°C.
5) Use test PCB with 2 x 70 µm Cu layers and size of 54 x 48 x 1.5 mm. Where applicable, thermal via array is placed under
the device footprint on this PCB. BTC50010-1TAA on PCB has RthJA(2P) = 19.6 K/W (referring to 1W power dissipation ).
PCB is vertical, keep constant environment temperature by indirect airflow of 6L/s.
6) PTOT = (TJ(0) - TC) / RthJC. PTOT_max = (105°C - 25°C) / 0.5 K/W = 160 W.
7) ESD susceptibility, HBM according to ANSI/ESDA/JEDEC JS-001-2010.
Data Sheet
Connect FET
9
1.3, 2015-02-06