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BTC50010-1TAA_15 Datasheet, PDF (19/31 Pages) Infineon Technologies AG – High-Side Power Connector
BTC50010-1TAA
Functional Description
R/L cable
Vbat
Module
RVS
VS
VZ2
by case Loss
of Load
RIN
IN
VIN
Module Ground
R/L
cable
Load
Ground
Figure 13 External Component for BTC50010-1TAA Loss of Load Protection
The 16V Z-diode refers to the maximum VS(REV) voltage of the chip. The 28V Z-diode refers to the maximum supply
voltage (VS) of the chip.
5.6
Inverse Current Capability
In case of inverse current, meaning a voltage VOUT at the output higher than the supply voltage VS (e.g. caused
by a load operating as a generator), a current IL will flow from output to VS pin via the body diode of the power
transistor (please refer to Figure 14). In case the IN pin is LOW1), the power DMOS is already activated and keeps
ON. In case, the input goes from “H” to “L”, the DMOS will be activated. Due to the limited speed of INV
comparator, the output voltage slope needs to be limited. In case the IN pin is HIGH2), power DMOS will not be
switched ON automatically. Current will flow through the intrinsic body diode. This power dissipation could cause
heating effect, which has to be considered.
VBAT
VS
Gate
driver
INOV L
cCoommpp. .
Figure 14 BTC50010-1TAA Inverse Current Circuitry
OUT
VOUT > VS
-IL
1) LOW means IN pin is pulled-down by external transistor or IIN > 0
2) HIGH (H) means IIN = 0
Data Sheet
19
Connect FET
1.3, 2015-02-06