BTC50010-1TAA_15 Datasheet, PDF (20/31 Pages) Infineon Technologies AG – High-Side Power Connector

BTC50010-1TAA
Functional Description
5.7
Reverse Polarity Protection
In case of reverse polarity, the intrinsic body diode of the power DMOS causes power dissipation. To limit the risk
of over temperature, the device provides Infineon^® Reversave™ function. The power in this intrinsic body diode is
limited by turning the DMOS ON. The DMOS resistance is then equal to R_{DS(ON)_REV} (please refer to Figure 18 and
Figure 19).
Additionally, the current into the logic has to be limited. The device includes a R_VS resistor which limits the current
in the diodes. To avoid over current in the R_VS resistor, it is nevertheless recommended to use a R_IN resistor.
Figure 15 shows a typical application. The recommended typical values for R_IN is 100Ω.
V_bat
I_RVS
R_VS
V_S
DOUT
V_IN
GND
IN
R_{IN IIN}
-I_L
OUT
Module Ground
Ground
Figure 15 BTC50010-1TAA Reverse Polarity Protection with External Components
Note: The R_VS has a typical value of 80Ω at 25°C. Refer to Figure 15, the R_VS and R_IN build up a voltage divider
to split up the supply voltage on BTC50010-1TAA, which protect the device during high voltage pulse (e.g.
ISO pulse 3b).
Data Sheet
Connect FET
20
1.3, 2015-02-06