BTC50010-1TAA_15 Datasheet, PDF (14/31 Pages) Infineon Technologies AG – High-Side Power Connector

5
Functional Description
BTC50010-1TAA
Functional Description
5.1
Power Stage
5.1.1 Output ON-State Resistance
The ON-state resistance R_DS(ON) depends on the supply voltage as well as the junction temperature T_J. Figure 16
shows the dependencies in terms of temperature and supply voltage, for the typical ON-state resistance. The
behavior in reverse polarity is described in Chapter 5.7.
A LOW signal (see Chapter 5.2) at the input pin causes a current I_IN flowing internally from the V_S pin out of the
IN pin to the module Ground, thus the power DMOS is switched ON with a dedicated slope, which is optimized in
terms of EMC emission.
5.1.2 Switching an Inductive Load
When switching OFF inductive loads with high side switches, the voltage V_OUT is driven below ground potential,
due to the fact that the inductance intends to continue driving the current. To prevent the destruction of the device
due to high voltages, the device implements an overvoltage protection, which clamps the voltage between VS and
VOUT at V_DS(CL) (see Figure 7).
Nevertheless it is not recommended to operate the device repetitively under this condition. Therefore, when driving
inductive loads, a free wheeling diode must be always placed.
V_BAT
V_SIN
IN
R_IN
I_IN
R_VS
LOGIC
Over-
voltage
clamp
V_S
I_L
OUT
L, R_L
V_DS
V_OUT
Figure 7 Overvoltage Clamp
Data Sheet
14
Connect FET
1.3, 2015-02-06