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BTC50010-1TAA_15 Datasheet, PDF (25/31 Pages) Infineon Technologies AG – High-Side Power Connector
BTC50010-1TAA
Application Information
6
Application Information
This chapter describes how the IC can be used in the application environment.
Note: The following application information is only given as a hint for the implementation of the device in the
application and shall not be regarded as a description or warranty of a certain functionality, condition or
quality of the device.
VBAT
R/L cable
Fuse B
Depending on application requirement, either
fuse A or fuse B will be placed
RIN
IN1
Vs
T1
IN2
OUT
Z2
CP
VZ2
VZ1
Z1
BTC50010
Module
Options for free wheeling path
CVS
of inductive load
Option
A
Option
B
COUT
Za
Zb
Control
signal
from
control
unit
Za
T2
Optional:
MOSFET to block
reverse current
Module Ground
Fuse A
R/L cable
Load
Ground
Figure 20 Application Diagram with BTC50010-1TAA
Table 9 Bill of material
Reference Value
T1
NPN or MOSFET
transistor
RIN
100 Ω
Purpose
NPN (e.g. BCR133) or MOSFET (e.g. BSS123) transistor suitable for 5V voltage
range controlled by control unit for driving the BTC50010-1TAA
Protection of BTC50010-1TAA and the microcontroller or control unit during
over voltage and reverse polarity, which could be created by huge negative
pulse (like ISO pulse 1)
Data Sheet
Connect FET
25
1.3, 2015-02-06