BFP760_15 Datasheet, PDF (8/27 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor

2
Features
• Very low noise amplifier based on Infineon´s reliable,
high volume SiGe:C technology
• High linearity OIP₃ = 27 dBm @ 5.5 GHz, 3 V, 30 mA
• High transition frequency f_T = 45 GHz @ 1 GHz, 3 V, 35mA
• NF_min = 0.95 dB @ 5.5 GHz, 3 V, 10 mA
3
• Maximum power gain Gms = 21.5 dB @ 3.5 GHz, 3 V, 30 mA
• Low power consumption, ideal for mobile applications
4
• Easy to use Pb-free (RoHS compliant) and halogen-free
standard package with visible leads
• Qualification report according to AEC-Q101 available
BFP760
Features
2
1
Applications
As Low Noise Amplifier (LNA) in
• Mobile and fixed connectivity applications: WLAN 802.11a/b/g/n/ac, WiMAX 2.5/3.5 GHz, Bluetooth
• Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB)
and C-band LNB
• Multimedia applications such as mobile/portable TV, CATV, FM Radio
• UMTS/LTE mobile phone applications
• ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
As discrete active mixer, buffer amplifier in VCOs
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Product Name
BFP760
Package
SOT343
Pin Configuration
1=B
2=E
3=C
4=E
Marking
R6s
Data Sheet
8
Revision 1.1, 2013-08-05