BFP760_15 Datasheet, PDF (5/27 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor

BFP760
List of Figures
List of Figures
Figure 4-1 Total Power Dissipation P_tot = f (T_s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 5-1 BFP760 Testing Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 5-2 Collector Current vs. Collector Emitter Voltage I_C = f (V_CE), I_B = Parameter in µA. . . . . . . . . . . . . 15
Figure 5-3 DC Current Gain h_FE = f (I_C), V_CE = 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 5-4 Collector Current vs. Base Emitter Voltage I_C = f (V_BE), V_CE = 2 V. . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 5-5 Base Current vs. Base Emitter Forward Voltage I_B = f (V_BE), V_CE = 2 V . . . . . . . . . . . . . . . . . . . . 16
Figure 5-6 Base Current vs. Base Emitter Reverse Voltage I_B = f (V_EB), V_CE = 2 V . . . . . . . . . . . . . . . . . . . . 17
Figure 5-7 Transition Frequency f_T = f (I_C), f = 1 GHz, V_CE = Parameter in V . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 5-8 3rd Order Intercept Point OIP₃ = f (I_C), Z_S = Z_L= 50 Ω, V_CE, f = Parameters . . . . . . . . . . . . . . . . . 18
Figure 5-9 3rd Order Intercept Point at output OIP₃ [dBm] = f (I_C, V_CE), Z_S = Z_L = 50 Ω, f = 5.5 GHz . . . . . . . 19
Figure 5-10 Compression Point at output OP_1dB [dBm] = f (I_C, V_CE), Z_S = Z_L = 50 Ω, f = 5.5 GHz . . . . . . . . . . 19
Figure 5-11 Collector Base Capacitance C_CB = f (V_CB), f = 1 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 5-12 Gain G_ma, G_ms, IS₂₁I² = f (f), V_CE = 3 V, I_C = 30 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 5-13 Maximum Power Gain G_max = f (I_C), V_CE = 3 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . . 21
Figure 5-14 Maximum Power Gain G_max = f (V_CE), I_C = 30 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 21
Figure 5-15 Input Reflection Coefficient S₁₁ = f (f), V_CE = 3 V, I_C = 10 / 30 mA . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 5-16 Source Impedance for Minimum Noise Figure Z_opt = f (f), V_CE = 3 V, I_C = 10 / 30 mA . . . . . . . . . . 22
Figure 5-17 Output Reflection Coefficient S₂₂ = f (f), V_CE = 3 V, I_C = 10 / 30 mA. . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 5-18 Noise Figure NF_min = f (f), V_CE = 3 V, I_C = 10 / 30 mA, Z_S = Z_opt . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 5-19 Noise Figure NF_min = f (I_C), V_CE = 3 V, Z_S = Z_opt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . 24
Figure 5-20 Noise Figure NF₅₀ = f (I_C), V_CE = 3 V, Z_S = 50 Ω, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 24
Figure 7-1 Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure 7-2 Package Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure 7-3 Marking Example (Marking BFP760: R6s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure 7-4 Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Data Sheet
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Revision 1.1, 2013-08-05