BFP760_15 Datasheet, PDF (21/27 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor

BFP760
Electrical Characteristics
40
0.15GHz
35
0.45GHz
30
0.90GHz
1.50GHz
25
1.90GHz
2.40GHz
20
3.50GHz
15
5.50GHz
10.00GHz
10
5
0
0 10 20 30 40 50 60 70 80 90
I_C [mA]
Figure 5-13 Maximum Power Gain G_max = f (I_C), V_CE = 3 V, f = Parameter in GHz
40
0.15GHz
35
0.45GHz
30
0.90GHz
1.50GHz
25
1.90GHz
2.40GHz
3.50GHz
20
5.50GHz
15
10.00GHz
10
5
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V_CE [V]
Figure 5-14 Maximum Power Gain G_max = f (V_CE), I_C = 30 mA, f = Parameter in GHz
Data Sheet
21
Revision 1.1, 2013-08-05