BFP760_15 Datasheet, PDF (13/27 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor

BFP760
Electrical Characteristics
Table 5-3 AC Characteristics, V_CE = 3 V, f = 0.9 GHz
Parameter
Symbol
Min.
Power gain
Maximum power gain
Transducer gain
Minimum Noise Figure
G_ms
–
|S₂₁|²
–
Minimum noise figure
Associated gain
Linearity
NF_min
–
G_ass
–
1 dB compression point at output
3rd order intercept point at output
OP_1dB
–
OIP₃
–
Values
Typ. Max.
29
–
28
–
0.5
–
25.5 –
14
–
27
–
Unit Note / Test Condition
dB
dB
dBm
I_C = 30 mA
I_C = 30 mA
I_C = 10 mA
I_C = 10 mA
Z_S = Z_L = 50 Ω
I_C = 30 mA
I_C = 30 mA
Table 5-4 AC Characteristics, V_CE = 3 V, f = 1.8 GHz
Parameter
Symbol
Min.
Power gain
Maximum power gain
Transducer gain
Minimum Noise Figure
G_ms
–
|S₂₁|²
–
Minimum noise figure
Associated gain
Linearity
NF_min
–
G_ass
–
1 dB compression point at output
3rd order intercept point at output
OP_1dB
–
OIP₃
–
Values
Typ. Max.
25
–
22
–
0.55 –
20.5 –
14.5 –
28
–
Unit Note / Test Condition
dB
dB
dBm
I_C = 30 mA
I_C = 30 mA
I_C = 10 mA
I_C = 10 mA
Z_S = Z_L = 50 Ω
I_C = 30 mA
I_C = 30 mA
Table 5-5 AC Characteristics, V_CE = 3 V, f = 2.4 GHz
Parameter
Symbol
Min.
Power gain
Maximum power gain
Transducer gain
Minimum Noise Figure
G_ms
–
|S₂₁|²
–
Minimum noise figure
Associated gain
Linearity
NF_min
–
G_ass
–
1 dB compression point at output
3rd order intercept point at output
OP_1dB
–
OIP₃
–
Values
Typ. Max.
23.5 –
20
–
0.6
–
19
–
14
–
28
–
Unit Note / Test Condition
dB
dB
dBm
I_C = 30 mA
I_C = 30 mA
I_C = 10 mA
I_C = 10 mA
Z_S = Z_L = 50 Ω
I_C = 30 mA
I_C = 30 mA
Data Sheet
13
Revision 1.1, 2013-08-05