BFP760_15 Datasheet, PDF (11/27 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor

5
Electrical Characteristics
BFP760
Electrical Characteristics
5.1
DC Characteristics
Table 5-1 DC Characteristics at T_A = 25 °C
Parameter
Symbol
Collector emitter breakdown voltage V_(BR)CEO
Min.
4
Collector emitter leakage current
I_CES
–
Values
Unit
Typ. Max.
4.7 –
V
10
400¹⁾ nA
1
40¹⁾
Collector base leakage current
Emitter base leakage current
I_CBO
–
I_EBO
–
1
40¹⁾
nA
1
40¹⁾
nA
DC current gain
h_FE
160 250 400
1) Maximum values not limited by the device but by the short cycle time of the 100% test
Note / Test Condition
I_C = 1 mA, I_B = 0
Open base
V_CE = 13 V, V_BE = 0
V_CE = 5 V, V_BE = 0
E-B short circuited
V_CB = 5V, I_E = 0
Open emitter
V_EB = 0.5V, I_C = 0
Open collector
V_CE = 3 V, I_C = 35 mA
Pulse measured
5.2
General AC Characteristics
Table 5-2 General AC Characteristics at T_A = 25 °C
Parameter
Symbol
Min.
Transition frequency
f_T
–
Collector base capacitance
C_CB
–
Collector emitter capacitance
C_CE
–
Emitter base capacitance
C_EB
–
Values
Typ. Max.
45
–
0.13 0.2
0.42 –
0.65 –
Unit Note / Test Condition
GHz
pF
pF
pF
V_CE = 3 V, I_C = 35 mA
f = 1 GHz
V_CB = 3 V, V_BE = 0
f = 1 MHz
Emitter grounded
V_CE = 3 V, V_BE = 0
f = 1 MHz
Base grounded
V_EB = 0.5 V, V_CB = 0
f = 1 MHz
Collector grounded
Data Sheet
11
Revision 1.1, 2013-08-05