BFP760_15 Datasheet, PDF (20/27 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor

BFP760
Electrical Characteristics
0.28
0.24
0.2
0.16
0.12
0.08
0.04
0
0
0.6
1.2
1.8
2.4
3
V_CB [V]
Figure 5-11 Collector Base Capacitance C_CB = f (V_CB), f = 1 MHz
45
40
35
30
G_ms
25
20
G_ma
15
|S₂₁|²
10
5
0
0 1 2 3 4 5 6 7 8 9 10
f [G]
Figure 5-12 Gain G_ma, G_ms, IS₂₁I² = f (f), V_CE = 3 V, I_C = 30 mA
Data Sheet
20
Revision 1.1, 2013-08-05