BFP760_15 Datasheet, PDF (24/27 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor

BFP760
Electrical Characteristics
3.2
3
2.8
f = 8GHz
2.6
f = 5.5GHz
2.4
f = 3.5GHz
2.2
f = 2.4GHz
2
f = 1.8GHz
1.8
f = 0.9GHz
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
5
10 15 20 25 30 35 40
I_C [mA]
Figure 5-19 Noise Figure NF_min = f (I_C), V_CE = 3 V, Z_S = Z_opt, f = Parameter in GHz
6
5.5
5
4.5
f = 8GHz
4
f = 5.5GHz
f = 3.5GHz
3.5
f = 2.4GHz
3
f = 1.8GHz
f = 0.9GHz
2.5
2
1.5
1
0.5
0
0
5
10 15 20 25 30 35 40
I_C [mA]
Figure 5-20 Noise Figure NF₅₀ = f (I_C), V_CE = 3 V, Z_S = 50 Ω, f = Parameter in GHz
Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as
a guarantee that all devices have identical characteristic curves. T_A = 25 °C
Data Sheet
24
Revision 1.1, 2013-08-05