BFP760_15 Datasheet, PDF (16/27 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor

BFP760
Electrical Characteristics
10²
10¹
10⁰
10^−1
10^−2
10^−3
10^−4
0.5 0.55 0.6 0.65 0.7 0.75 0.8
V_BE [V]
Figure 5-4 Collector Current vs. Base Emitter Voltage I_C = f (V_BE), V_CE = 2 V
0.85
10⁰
10^−1
10^−2
10^−3
10^−4
10^−5
10^−6
0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85
V_BE [V]
Figure 5-5 Base Current vs. Base Emitter Forward Voltage I_B = f (V_BE), V_CE = 2 V
Data Sheet
16
Revision 1.1, 2013-08-05