BFP760_15 Datasheet, PDF (23/27 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor

BFP760
Electrical Characteristics
0.5
0.4
1
1.5
2
0.3
10.0
10.0
0.2
9.0
9.0
8.0
8.0 7.0
0.1
7.0
6.0
6.0 ^5.0
0
0.1 0.2 0.3 0.4 ⁵0^.0.5 ^4.0
1
3.0
4.0
−0.1
2.0
3.0
0.03 to 10 GHz
1.5 2 3 4 5
−0.2
2.0
1.0
−0.3
−0.4
−0.5
1.0
−2
−1.5
−1
3
4
5
10
0.03 ^0.03
−10
−5
−4
−3
30mA
10mA
Figure 5-17 Output Reflection Coefficient S₂₂ = f (f), V_CE = 3 V, I_C = 10 / 30 mA
2
1.8
1.6
1.4
1.2
1
0.8
0.6
I_C = 30mA
I_C = 10mA
0.4
0.2
0
0
1
2
3
4
5
6
7
8
f [GHz]
Figure 5-18 Noise Figure NF_min = f (f), V_CE = 3 V, I_C = 10 / 30 mA, Z_S = Z_opt
Data Sheet
23
Revision 1.1, 2013-08-05