BFP760_15 Datasheet, PDF (19/27 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor

BFP760
Electrical Characteristics
50
1819 22 23 ₂₄
26 ₂₇
28
45
40
35
28
30
25
20
15
26
10
1
1.5
2
2.5
3
3.5
4
V_CE [V]
Figure 5-9 3rd Order Intercept Point at output OIP₃ [dBm] = f (I_C, V_CE), Z_S = Z_L = 50 Ω, f = 5.5 GHz
40
35
30
13
14
25
20
15
4
10
5 ^{−2−10 1 2}
1
1.5
10
9
8
7
6
5
34
−−34 ₂
−2−10
12
2.5
V [V]
CE
12
11
10
9
8
7
6
5
34
−3
−2−10
3
12
3.5
13
12
11
10
9
8
7
6
5
3
−3 ₄
Figure 5-10 Compression Point at output OP_1dB [dBm] = f (I_C, V_CE), Z_S = Z_L = 50 Ω, f = 5.5 GHz
Data Sheet
19
Revision 1.1, 2013-08-05