BFP760_15 Datasheet, PDF (14/27 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor

BFP760
Electrical Characteristics
Table 5-6 AC Characteristics, V_CE = 3 V, f = 3.5 GHz
Parameter
Symbol
Min.
Power gain
Maximum power gain
Transducer gain
Minimum Noise Figure
G_ms
–
|S₂₁|²
–
Minimum noise figure
Associated gain
Linearity
NF_min
–
G_ass
–
1 dB compression point at output
3rd order intercept point at output
OP_1dB
–
OIP₃
–
Values
Typ. Max.
21.5 –
16.5 –
0.7
–
16
–
14.5 –
28.5 –
Unit Note / Test Condition
dB
dB
dBm
I_C = 30 mA
I_C = 30 mA
I_C = 10 mA
I_C = 10 mA
Z_S = Z_L = 50 Ω
I_C = 30 mA
I_C = 30 mA
Table 5-7 AC Characteristics, V_CE = 3 V, f = 5.5 GHz
Parameter
Symbol
Min.
Power gain
Maximum power gain
Transducer gain
Minimum Noise Figure
G_ms
–
|S₂₁|²
–
Minimum noise figure
Associated gain
Linearity
NF_min
–
G_ass
–
1 dB compression point at output
3rd order intercept point at output
OP_1dB
–
OIP₃
–
Values
Typ. Max.
16.5 –
12
–
0.95 –
12.5 –
13
–
27
–
Unit Note / Test Condition
dB
dB
dBm
I_C = 30 mA
I_C = 30 mA
I_C = 10 mA
I_C = 10 mA
Z_S = Z_L = 50 Ω
I_C = 30 mA
I_C = 30 mA
Note: OIP₃ value depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50 Ω from 0.2 MHz to 12 GHz
Data Sheet
14
Revision 1.1, 2013-08-05