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BFP650H6327 Datasheet, PDF (8/29 Pages) Infineon Technologies AG – High Linearity Silicon Germanium Bipolar RF Transistor | |||
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2
Features
⢠Linear low noise driver amplifier for RF frontends up to 5 GHz
based on Infineon´s reliable, high volume SiGe:C wafer technology
⢠Output compression point OP1dB = 17 dBm
at 70 mA, 3 V, 2.4 GHz, 50 ⦠system
⢠Output 3rd order intermodulation point OIP3 = 30 dBm
at 70 mA, 3 V, 2.4 GHz, 50 ⦠system
⢠Maximum available gain Gma = 17.5 dB at 70 mA, 3 V, 2.4 GHz
⢠Minimum noise figure NFmin = 1 dB at 30 mA, 3 V, 2.4 GHz
⢠Easy to use Pb-free (RoHS compliant) and halogen-free standard
package with visible leads
⢠Qualification report according to AEC-Q101 available
BFP650
Features
Application Examples
Driver amplifier
⢠ISM bands 434 and 868 MHz
⢠1.9 GHz cordless phones
⢠CATV LNA
Transmitter driver amplifier
⢠2.4 GHz WLAN / Bluetooth, 2.4 / 3.5 GHz WiMAX
Output stage LNA for active antennas
⢠TV, GPS, SDARS
⢠2.4 / 5 GHz WLAN
⢠2.4 / 3.5 / 5 GHz WiMAX, etc
Suitable for 5 - 10.5 GHz oscillators
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Product Name
BFP650
Package
SOT343
1=B
Pin Configuration
2=E
3=C
4=E
Marking
R5s
Data Sheet
8
Revision 1.1, 2012-09-13
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