BFP650H6327 Datasheet, PDF (7/29 Pages) Infineon Technologies AG – High Linearity Silicon Germanium Bipolar RF Transistor

BFP650
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Product Brief
Product Brief
The BFP650 is a high linearity wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high
volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports
voltages up to V_CEO = 4 V and currents up to I_C = 150 mA. With its high linearity at currents as low as 30 mA the
device supports energy efficient designs. The typical transition frequency is approximately 42 GHz, hence the
device offers high power gain at frequencies up to 5 GHz in amplifier applications. the device is housed in an easy
to use plastic package with visible leads.
Data Sheet
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Revision 1.1, 2012-09-13