BFP650H6327 Datasheet, PDF (22/29 Pages) Infineon Technologies AG – High Linearity Silicon Germanium Bipolar RF Transistor

BFP650
Electrical Characteristics
42
39
0.15GHz
36
33
0.45GHz
30
27
0.90GHz
24
21
1.50GHz
18
1.90GHz
2.40GHz
15
3.50GHz
12
9
5.50GHz
6
10.00GHz
3
0
0 20 40 60 80 100 120 140 160 180
I_C [mA]
Figure 5-11 Maximum Power Gain G_max = f (I_C), V_CE = 3 V, f = Parameter in GHz
42
39
0.15GHz
36
33
0.45GHz
30
27
0.90GHz
24
1.50GHz
21
1.90GHz
18
2.40GHz
15
3.50GHz
12
5.50GHz
9
6
10.00GHz
3
0
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V_CE [V]
Figure 5-12 Maximum Power Gain G_max = f (V_CE), I_C = 70 mA, f = Parameter in GHz
Data Sheet
22
Revision 1.1, 2012-09-13