BFP650H6327 Datasheet, PDF (25/29 Pages) Infineon Technologies AG – High Linearity Silicon Germanium Bipolar RF Transistor

BFP650
Electrical Characteristics
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
f = 3.5GHz
f = 2.4GHz
f = 1.9GHz
f = 0.9GHz
f = 0.45GHz
20
40
60
80
100
I_c [mA]
Figure 5-17 Noise Figure NF_min = f (I_C), V_CE = 3 V, Z_S = Z_opt= Parameter in GHz
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0
f = 3.5GHz
f = 2.4GHz
f = 1.9GHz
f = 0.9GHz
f = 0.45GHz
20
40
60
80
100
I_c [mA]
Figure 5-18 Noise Figure NF₅₀ = f (I_C), V_CE = 3 V, Z_S = 50 Ω, f = Parameter in GHz
Data Sheet
25
Revision 1.1, 2012-09-13