BFP650H6327 Datasheet, PDF (19/29 Pages) Infineon Technologies AG – High Linearity Silicon Germanium Bipolar RF Transistor

1.E-05
BFP650
Electrical Characteristics
1.E-06
1.E-07
1.E-08
1.E-09
0.8
1
1.2
1.4
1.6
1.8
2
V_EB [V]
Figure 5-6 Base Current vs. Base Emitter Reverse Voltage I_B = f (V_EB), V_CE = 2 V
Data Sheet
19
Revision 1.1, 2012-09-13