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BFP650H6327 Datasheet, PDF (13/29 Pages) Infineon Technologies AG – High Linearity Silicon Germanium Bipolar RF Transistor | |||
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BFP650
Electrical Characteristics
Table 5-4 AC Characteristics, VCE = 3 V, f = 450 MHz
Parameter
Symbol
Min.
Maximum power gain
High linearity operation point
Class A operation point
Transducer gain
Gms
â
Gms
â
High linearity operation point
Class A operation point
Minimum noise figure
S21
â
S21
â
Minimum noise figure
Associated gain
Linearity
NFmin
â
Gass
â
1 dB gain compression point
3rd order intercept point
OP1dB
â
OIP3
â
Values
Typ. Max.
30
â
31.5 â
29
â
29.5 â
0.75 â
29.5 â
16.5 â
30
â
Unit Note / Test Condition
dB
dB
dB
dBm
IC = 30 mA
IC = 70 mA
ZS = ZL = 50 â¦
IC = 30 mA
IC = 70 mA
ZS = Zopt
IC = 30 mA
IC = 30 mA
ZS = ZL = 50 â¦
IC = 70 mA
IC = 70 mA
Table 5-5 AC Characteristics, VCE = 3 V, f = 900 MHz
Parameter
Symbol
Min.
Maximum power gain
High linearity operation point
Class A operation point
Transducer gain
Gms
â
Gms
â
High linearity operation point
Class A operation point
Minimum noise figure
S21
â
S21
â
Minimum noise figure
Associated gain
Linearity
NFmin
â
Gass
â
1 dB gain compression point
3rd order intercept point
OP1dB
â
OIP3
â
Values
Typ. Max.
25.5 â
26.5 â
23.5 â
24
â
0.8
â
24.5 â
17
â
31
â
Unit Note / Test Condition
dB
dB
dB
dBm
IC = 30 mA
IC = 70 mA
ZS = ZL = 50 â¦
IC = 30 mA
IC = 70 mA
ZS = Zopt
IC = 30 mA
IC = 30 mA
ZS = ZL = 50 â¦
IC = 70 mA
IC = 70 mA
Data Sheet
13
Revision 1.1, 2012-09-13
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