BFP650H6327 Datasheet, PDF (26/29 Pages) Infineon Technologies AG – High Linearity Silicon Germanium Bipolar RF Transistor

BFP650
Electrical Characteristics
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0
Z = 50Ω
S
Z =Z
S Sopt
20
40
60
80
100
I_c [mA]
Figure 5-19 Comparison Noise Figure NF₅₀ / NF_min= f (I_C), V_CE = 3 V, f = 2.4 GHz
Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as
a guarantee that all devices have identical characteristic curves. T_A = 25 °C.
Data Sheet
26
Revision 1.1, 2012-09-13