BFP650H6327 Datasheet, PDF (21/29 Pages) Infineon Technologies AG – High Linearity Silicon Germanium Bipolar RF Transistor

BFP650
Electrical Characteristics
0.6
0.5
0.4
0.3
0.2
0.1
0
0 0.5 1 1.5 2 2.5 3 3.5 4
V_CB [V]
Figure 5-9 Collector Base Capacitance C_CCB = f (V_CB), f = 1 MHz
42
39
36
33
G_ms
30
27
24
21
G_ma
18
15
12
9
|S₂₁|²
6
3
0
0 1 2 3 4 5 6 7 8 9 10
f [GHz]
Figure 5-10 Gain G_ma, G_ms, IS₂₁I² = f (f), V_CE = 3 V, I_C = 70 mA
Data Sheet
21
Revision 1.1, 2012-09-13