BFP650H6327 Datasheet, PDF (20/29 Pages) Infineon Technologies AG – High Linearity Silicon Germanium Bipolar RF Transistor

5.5
Characteristic AC Diagrams
BFP650
Electrical Characteristics
45
40
4.00V
35
30
3.00V
25
2.50V
20
15
2.00V
10
5
1.00V
0
0 20 40 60 80 100 120 140 160 180
I_C [mA]
Figure 5-7 Transition Frequency f_T = f (I_C), f = 1 GHz, V_CE = Parameter in V
32
30
28
26
3V, 2.4GHz
4V, 2.4GHz
3V, 3.5GHz
24
4V, 3.5GHz
22
20
18
0 20 40 60 80 100 120 140 160 180
I_C [mA]
Figure 5-8 3rd Order Intercept Point OIP₃ = f (I_C), Z_S = Z_L= 50 Ω, V_CE, f = Parameters
Data Sheet
20
Revision 1.1, 2012-09-13