BFP650H6327 Datasheet, PDF (17/29 Pages) Infineon Technologies AG – High Linearity Silicon Germanium Bipolar RF Transistor

5.4
Characteristic DC Diagrams
BFP650
Electrical Characteristics
160
140
940µA
120
810µA
690µA
100
575µA
80
460µA
350µA
60
260µA
40
160µA
20
80µA
18µA
0
0
1
2
3
4
5
V_CE [V]
Figure 5-2 Collector Current vs. Collector Emitter Voltage I_C = f (V_CE), I_B = Parameter in μA
120
110
100
90
80
70
60
50
0.1
1
10
I_C [mA]
Figure 5-3 DC Current Gain h_FE = f (I_C), V_CE = 3 V
Data Sheet
17
100
1000
Revision 1.1, 2012-09-13