BFP650H6327 Datasheet, PDF (14/29 Pages) Infineon Technologies AG – High Linearity Silicon Germanium Bipolar RF Transistor

BFP650
Electrical Characteristics
Table 5-6 AC Characteristics, V_CE = 3 V, f = 1.5 GHz
Parameter
Symbol
Min.
Maximum power gain
High linearity operation point
Class A operation point
Transducer gain
G_ms
–
G_ms
–
High linearity operation point
Class A operation point
Minimum noise figure
S₂₁
–
S₂₁
–
Minimum noise figure
Associated gain
Linearity
NF_min
–
G_ass
–
1 dB gain compression point
3rd order intercept point
OP_1dB
–
OIP₃
–
Values
Typ. Max.
22
–
22.5 –
19
–
19.5 –
0.85 –
20.5 –
17
–
31
–
Unit Note / Test Condition
dB
dB
dB
dBm
I_C = 30 mA
I_C = 70 mA
Z_S = Z_L = 50 Ω
I_C = 30 mA
I_C = 70 mA
Z_S = Z_opt
I_C = 30 mA
I_C = 30 mA
Z_S = Z_L = 50 Ω
I_C = 70 mA
I_C = 70 mA
Table 5-7 AC Characteristics, V_CE = 3 V, f = 1.9 GHz
Parameter
Symbol
Min.
Maximum power gain
High linearity operation point
Class A operation point
Transducer gain
G_ma
–
G_ms
–
High linearity operation point
Class A operation point
Minimum noise figure
S₂₁
–
S₂₁
–
Minimum noise figure
Associated gain
Linearity
NF_min
–
G_ass
–
1 dB gain compression point
3rd order intercept point
OP_1dB
–
OIP₃
–
Values
Typ. Max.
20.5 –
20
–
17
–
17.5 –
0.95 –
17.5 –
17
–
30.5 –
Unit Note / Test Condition
dB
dB
dB
dBm
I_C = 30 mA
I_C = 70 mA
Z_S = Z_L = 50 Ω
I_C = 30 mA
I_C = 70 mA
Z_S = Z_opt
I_C = 30 mA
I_C = 30 mA
Z_S = Z_L = 50 Ω
I_C = 70 mA
I_C = 70 mA
Data Sheet
14
Revision 1.1, 2012-09-13