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HYB25D512400AT Datasheet, PDF (61/76 Pages) Infineon Technologies AG – 512Mbit Double Data Rate SDRAM
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HYB25D512[16/40/80]0AT–[6/7/7F]
Electrical Characteristics
Table 19
Symbol
IDD0
IDD1
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
IDD6
IDD7
IDD Specification and Conditions
–6
–7
–7F
DDR333
DDR266A
DDR266
typ. max. typ. max. typ. max.
155 200 135 170 147 185
155 200 135 170 140 177
170 215 145 180 158 196
170 215 145 180 151 187
12
18
10
14
10
14
45
60
40
50
40
50
30
40
20
28
20
28
17
23
14
18
14
18
60
75
55
70
55
70
60
75
55
70
55
70
200 245 165 200 172 208
200 245 165 200 172 208
190 235 160 195 166 203
110 130 90
105
94
109
270 335 255 310 270 329
2.5 5
2.5 5
2.5 5
330 405 315 380 331 399
330 405 315 380 343 414
Unit
Note/Test Condition1)
mA
x4/x8 2)3)
mA x16 3)
mA x4/x8 3)
mA x16 3)
mA
3)
mA
3)
mA
3)
mA
3)
mA x4/x8 3)
mA x16 3)
mA x4/x8 3)
mA x16 3)
mA x4/x8 3)
mA x16 3)
mA
3)4)
mA x4/x8 3)
mA x4/x8 3)
mA x16 3)
1) Test conditions for typical values: VDD = 2.5 V (DDR266, DDR333), TA = 25 °C, test conditions for maximum values: VDD =
2.7 V, TA = 10 °C
2) IDD specifications are tested after the device is properly initialized and measured at 133 MHz for DDR266, 166 MHz for
DDR333.
3) Input slew rate = 1 V/ns.
4) Enables on-chip refresh and address counters.
Data Sheet
61
Rev. 1.0, 2004-03
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