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HYB25D512400AT Datasheet, PDF (51/76 Pages) Infineon Technologies AG – 512Mbit Double Data Rate SDRAM
HYB25D512[16/40/80]0AT–[6/7/7F]
Electrical Characteristics
4
Electrical Characteristics
4.1
Operating Conditions
Table 11 Absolute Maximum Ratings
Parameter
Voltage on I/O pins relative to VSS
Voltage on inputs relative to VSS
Voltage on VDD supply relative to VSS
Voltage on VDDQ supply relative to VSS
Operating temperature (ambient)
Storage temperature (plastic)
Power dissipation (per SDRAM component)
Short circuit output current
Symbol
Values
Unit Note/ Test Condition
min. typ. max.
VIN, VOUT –0.5 — VDDQ+0.5 V —
VIN
–1.0 — +3.6
V—
VDD
–1.0 — +3.6
V—
VDDQ
–1.0 — +3.6
V—
TA
0 — +70
°C —
TSTG
-55 — +150
°C —
PD
— 1.5 —
W—
IOUT
— 50 —
mA —
Attention: Permanent damage to the device may occur if “Absolute Maximum Ratings” are exceeded. This
is a stress rating only, and functional operation should be restricted to recommended operation
conditions. Exposure to absolute maximum rating conditions for extended periods of time may
affect device reliability and exceeding only one of the values may cause irreversible damage to
the integrated circuit.
Table 12 Input and Output Capacitances
Parameter
Input Capacitance: CK, CK
Delta Input Capacitance
Input Capacitance:
All other input-only pins
Delta Input Capacitance:
All other input-only pins
Symbol
Min.
CI1
1.5
CdI1
—
CI2
2.0
CdIO
—
Values
Typ. Max.
—
2.5
—
0.25
—
3.0
Unit
pF
pF
pF
Note/
Test Condition
TSOPII 1)
1)
TSOPII 1)
—
0.5
pF
1)
Input/Output Capacitance: DQ, DQS, DM
CIO
4.0 —
Delta Input/Output Capacitance: DQ, DQS, DM
CdIO
—
—
5.0
pF TSOPII 1)2)
0.5
pF
1)
1) These values are guaranteed by design and are tested on a sample base only. VDDQ = VDD = 2.5 V ± 0.2 V, f = 100 MHz,
TA = 25 °C, VOUT(DC) = VDDQ/2, VOUT (Peak to Peak) 0.2 V. Unused pins are tied to ground.
2) DM inputs are grouped with I/O pins reflecting the fact that they are matched in loading to DQ and DQS to facilitate trace
matching at the board level.
Data Sheet
51
Rev. 1.0, 2004-03