HYB39L256160AC Datasheet, PDF (41/48 Pages) Infineon Technologies AG – 256 MBit Synchronous Low-Power DRAM

HYB 39L256160AC / T
256MBit 3.3V Mobile-RAM
17. Random Row Read (Interleaving Banks) with Precharge
17.1 CAS Latency = 2
Burst Length = 8, CAS Latency = 2
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t _CK2
CKE High
CS
RAS
CAS
WE
BS
AP
RBx
RAx
RBy
Addr.
DQM
RBx
CBx
t _RCD
H i-Z
DQ
RAx
CAx
RBy
CBy
t _RP
t _AC2
Bx0 Bx1 Bx2 Bx3 Bx4 Bx5 Bx6 Bx7 Ax0 Ax1 Ax2 Ax3 Ax4 Ax5 Ax6 Ax7
By0 By1
Activate Read
Command Command
Bank B Bank B
A c tiv a te
Command
Bank A
P recharge A ctivate
Command Command
Bank B Bank B
Read
Command
Bank A
Read
Command
Bank B
SPT03925_2
INFINEON Technologies AG
41
2002-12-20