HYB39L256160AC Datasheet, PDF (23/48 Pages) Infineon Technologies AG – 256 MBit Synchronous Low-Power DRAM

HYB 39L256160AC / T
256MBit 3.3V Mobile-RAM
5. Burst Write Operation
(Burst Length = 4, CAS latency = 2, 3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
Command NOP Write A NOP NOP NOP NOP NOP NOP NOP
DQ’s
DIN A0 DIN A1 DIN A2 DIN A3 don’t care
The first data element and the Write
are registered on the same clock edge.
Extra data is ignored after
termination of a Burst.
SPT03790
INFINEON Technologies AG
23
2002-12-20